PhD candidate for developing and building new concepts for ultra-fast, medium voltage solid-state pulse modulators

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PhD candidate for developing and building new concepts for ultra-fast, medium voltage solid-state pulse modulators

100%, Zurich, fixed-term



The Laboratory for High Power Electronic Systems (HPE) at the Department of Information Technology and Electrical Engineering at ETH Zurich conducts internationally leading research on power electronic converter systems, which are required, for example, in future energy distribution systems for the integration of renewable energy sources or in traction applications/electric mobility. Another research focus is on solid-state pulse modulators for medical applications (computer tomography/cancer treatment) and accelerators (e.g. CERN). For a new research project on solid-state pulse generators, we are recruiting a: PhD candidate (100%) for developing and building new concepts for ultra-fast, medium voltage solid-state pulse modulators

Job description


We are seeking individuals with outstanding academic credentials and a high level of motivation to engage in doctoral-level research on the development of novel concepts for ultrafast pulse modulators capable of generating pulses with an amplitude of up to 15kV/300A, a pulse width in the range of 1-2ns and a rise/fall time of less than 500ps. Such fast ns-pulse generators are required, for example, in kicker systems, which are a key element of future synchrotron light sources (e.g. SLS 2.0 PSI) needed for basic research in biomedicine, engineering and natural sciences. The extremely fast rise and fall times of the pulses are crucial for the efficient operation of the kicker system without distorting the electron beam. The very fast voltage pulses cannot be generated with ’conventional’ switching devices as for example GaN HEMTs or SiC MOSFETs, since these are too slow. Therefore, the project will investigate concepts that exploit the fast reverse recovery behaviour of special diodes and use these diodes as "opening switches" in combination with GaN HEMTs and/or SiC MOSFETs. Such diodes will be developed by the Advanced Power Semiconductor Laboratory (APS) at the ETH within the framework of the planned project.

The research project will start with the investigation and development of basic pulse generator topologies using the extremely fast diodes as opening switches. Since all the parasitic elements of the circuit and the diode package strongly influence the achievable switching speed, the converter layout and the packaging will be optimised in a second step of the project. This includes investigating the series connection of several diodes and/or sub-circuits to achieve the required pulse voltage levels. The packaging of the developed diodes will be investigated in cooperation with APS. Finally, the design of the pulse generator will be optimised, and a prototype system will be built to validate the research results. The project will be carried out in close collaboration with various research facilities that require such fast ns pulse generators for the design of future accelerator systems.


Profile

The candidate must have a diploma/M.Sc. degree in electrical engineering with excellent grades, fundamental knowledge of power electronic converter systems, good communication skills, fluency in English and the willingness to fully commit yourself as part of an international team. In addition, you should be interested in the detailed investigation and modelling of converter topologies including all parasitic elements and in the detailed operation of semiconductor devices.

Workplace



We offer

Our laboratory offers a challenging and scientifically highly exciting full-time position in a dynamic, international team at one of the world-wide leading technical universities. Furthermore, we strongly encourage participation at international conferences and offer a competitive salary, excellent benefits as well as outstanding research and laboratory facilities for experimental work. In the project with a duration of approximately 3-4 years, you will also cooperate with people from the Advanced Power Semiconductor Laboratory (APS) and research facilities utilising accelerator systems. The planned start date for the project is February 2025 or at a later date.

Working, teaching and research at ETH Zurich

We value diversity


In line with our values , ETH Zurich encourages an inclusive culture. We promote equality of opportunity, value diversity and nurture a working and learning environment in which the rights and dignity of all our staff and students are respected. Visit our Equal Opportunities and Diversity website to find out how we ensure a fair and open environment that allows everyone to grow and flourish.



Curious? So are we.


We look forward to receiving your online application with the following documents

  • comprehensive CV
  • your B.S. and M.Sc. transcripts
  • electronic copies of the B.Sc/M.Sc. thesis and/or your publications (if available)
  • names/adresses of references

Please note that we exclusively accept applications submitted through our online application portal. Applications via email or postal services will not be considered.

Further information about Laboratory for High Power Electronic Systems (HPE) can be found on our website . For further information, please contact Prof. Dr. Jürgen Biela, Tel 0041 (0)44 632 69 22 or e-mail jbielaethz.ch (no applications).



Apply online now





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